Emerging Memories Take Stage at VLSI Symposium

The 2012 Symposia on VLSI Technology & Circuits, planned for mid-June in Honolulu, points to future directions in memory technology, including 3-D NAND, spin torque transfer MRAM, ferroelectric memories, and other emerging memory types. Intel’s K. Zhang will give an invited paper on SRAMs using tri-gate transistors, scheduled for June 13th in the late morning. Read entire article